2inch Molecular Beam Epitaxy System
Molecular Beam Epitaxy (MBE) systems, characterized by ultra-high vacuum conditions, ultra-high precision, and ultra-uniform thin film deposition, serve as critical process equipment for compound semiconductor material and device fabrication. These systems are extensively employed in the preparation of epitaxial thin films for solid-state microwave radio frequency devices, semiconductor lasers, detectors, and related applications.
The ACG-MBE-400 is designed for the preparation of high-performance oxide materials, topological insulators, and more. Its modular design allows interconnection with load-lock equipment to enable the deposition of diverse materials.
Technical Parameter
| Wafer size | 2inch |
| Vacuum Measurement | Ion gauge + Cathode gauge + Pirani gauge |
| Ultimate Vacuum | Better than 1×10^−10 mbar |
| Vacuum Pump System | Mechanical pump + Molecular pump + Adsorption pump + Cold trap (liquid nitrogen, optional) |
| Temperature Control | RT–800°C (RT–1200°C optional) |
| Evaporation Source | 6-10, different types of evaporation sources and electron beam sources |
| Thickness Measurement | Retractable thickness monitor |
| In-situ Monitoring | Optional RHEED |
| Load Chamber | 6×2-inch wafer compatible |
| Control System | PC + PLC, fully automatic operation with safety interlock |
| Dimension | 3m (L) × 2m (W) × 2m (H) |
| Optional Features | Low-throughput pump, automatic transfer, reactive sputtering, thickness monitor, process recipes, high-pressure RHEED, etc. |
